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1

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Yu., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V., Shamirzaev, T. S.

Journal:

Optoelectronics, Instrumentation and Data Processing

Année:

2018

Langue:

english

Fichier:

PDF, 282 KB

english, 2018

2

Electron microscopy of GaAs Structures with InAs and as quantum dots

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 432 KB

english, 2011

3

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Sun, Weiguo, Fan, Huitao, Peng, Zhenyu, Zhang, Liang, Zhang, Xiaolei, Zhang, Lei, Lu, Zhengxiong, Si, Junjie, Emelyanov, E., Putyato, M., Semyagin, B., Pchelyakov, O., Preobrazhenskii, V.

Journal:

Infrared Physics & Technology

Année:

2014

Langue:

english

Fichier:

PDF, 743 KB

english, 2014

4

High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser

Kisel, V. E., Rudenkov, A. S., Pavlyuk, A. A., Kovalyov, A. A., Preobrazhenskii, V. V., Putyato, M. A., Rubtsova, N. N., Semyagin, B. R., Kuleshov, N. V.

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2015

5

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

Krishtopenko, S. S., Ikonnikov, A. V., Maremyanin, K. V., Bovkun, L. S., Spirin, K. E., Kadykov, A. M., Marcinkiewicz, M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Semyagin, B. R., Putyato, M.

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 285 KB

english, 2017

6

Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED

Vasev, A.V., Putyato, M.A., Preobrazhenskii, V.V.

Journal:

Surface Science

Année:

2018

Langue:

english

Fichier:

PDF, 974 KB

english, 2018

7

[IEEE 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2019.6.29-2019.7.3)] 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - MBE of InAsSb Solid Solutions on Misoriented GaAs(100) Substrates: Experiment and Kinetic Analysis

Emelyanov, Eugene A., Petrushkov, Mikhail O., Putyato, Mikhail A., Vasev, Andrei V., Semyagin, Boris R., Preobrazhenskii, Valerii V.

Année:

2019

Langue:

english

Fichier:

PDF, 465 KB

english, 2019

8

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

A.A. Kovalyov, V.V. Preobrazhenskii, M.A. Putyato, O.P. Pchelyakov, N.N. Rubtsova, B.R. Semyagin, V.E. Kisel', S.V. Kuril'chik, N.V. Kuleshov

Journal:

Laser Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 120 KB

english, 2011

9

Evidence for interlayer donor–acceptor recombination in type II GaAs/AlAs superlattices

K.S. Zhuravlev, D.A. Petrakov, A.M. Gilinsky, T.S. Shamirzaev, V.V. Preobrazhenskii, B.R. Semyagin, M.A. Putyato

Journal:

Superlattices and Microstructures

Année:

2000

Langue:

english

Fichier:

PDF, 160 KB

english, 2000

10

Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P

M.V. Baidakova, N.A. Bert, V.V. Chaldyshev, V.N. Nevedomsky, M.A. Yagovkina, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 302 KB

english, 2009

11

InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

M.A Putyato, V.V Preobrazhenskii, B.R Semyagin, Yu.B Bolkhovityanov, A.M Gilinsky, A.K Gutakousky, M.A Revenko, O.P Pchelyakov, D.F Feklin

Journal:

Journal of Crystal Growth

Année:

2003

Langue:

english

Fichier:

PDF, 351 KB

english, 2003

12

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

V.V Preobrazhenskii, M.A Putyato, O.P Pchelyakov, B.R Semyagin

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 119 KB

english, 1999

13

Surface structure transitions on (0 0 1) GaAs during MBE

V.V Preobrazhenskii, M.A Putyato, O.P Pchelyakov, B.R Semyagin

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 108 KB

english, 1999

14

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE

V.V Chaldyshev, N.N Faleev, N.A Bert, Yu.G Musikhin, A.E Kunitsyn, V.V Preobrazhenskii, M.A Putyato, B.R Semyagin, P Werner

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 187 KB

english, 1999

15

Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

V.V. Chaldyshev, N.A. Bert, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin

Journal:

Materials Science and Engineering: A

Année:

1997

Langue:

english

Fichier:

PDF, 387 KB

english, 1997

16

Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

V.Ya Prinz, V.A Seleznev, A.K Gutakovsky, A.V Chehovskiy, V.V Preobrazhenskii, M.A Putyato, T.A Gavrilova

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2000

Langue:

english

Fichier:

PDF, 502 KB

english, 2000

17

Raman scattering on semiconductor microtubes

Alexander Milekhin, Sergei Mutilin, Julia Yukecheva, Michael Putyato, Alexander Vorob'ev, Victor Prinz, Vladimir Kolchuzhin, Jan Mehner, Dietrich R. T. Zahn

Journal:

physica status solidi (c)

Année:

2009

Langue:

english

Fichier:

PDF, 227 KB

english, 2009

18

Self-organization of InAs and As quantum dots in GaAs by a combined molecular beam epitaxy process

V. V. Chaldyshev, N. A. Bert, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

physica status solidi (c)

Année:

2009

Langue:

english

Fichier:

PDF, 359 KB

english, 2009

19

Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy

I. A. Bobrovnikova, A. I. Veinger, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'eva, D. I. Lubyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, V. V. Chaldyshev, M. P. Yakubeny

Journal:

Russian Physics Journal

Année:

1998

Langue:

english

Fichier:

PDF, 1.04 MB

english, 1998

20

Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

L. G. Lavrent’eva, M. D. Vilisova, I. A. Bobrovnikova, S. E. Toropov, V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, V. V. Chaldyshev

Journal:

Journal of Structural Chemistry

Année:

2004

Langue:

english

Fichier:

PDF, 449 KB

english, 2004

21

Defect formation in LT MBE InGaAs and GaAs

L. L. Anisimova, A. K. Gutakovskii, I. V. Ivonin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach

Journal:

Journal of Structural Chemistry

Année:

2004

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2004

22

Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing

A. V. Vasev, M. A. Putyato, B. R. Semyagin, V. A. Seleznev, V. V. Preobrazhenskii

Journal:

Russian Physics Journal

Année:

2008

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2008

23

Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandemAIIIBV/Si-solar energy converters on an active silicon substrate

M. A. Putyato, B. R. Semyagin, E. A. Emel’yanov, N. A. Pakhanov, V. V. Preobrazhenskii

Journal:

Russian Physics Journal

Année:

2011

Langue:

english

Fichier:

PDF, 718 KB

english, 2011

24

Donor-acceptor recombination in type-II GaAs/AlAs superlattices

K. S. Zhuravlev, A. M. Gilinskii, T. S. Shamirzaev, V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, S. S. Chipkin

Journal:

Physics of the Solid State

Année:

1998

Langue:

english

Fichier:

PDF, 94 KB

english, 1998

25

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 125 KB

english, 1998

26

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, N. N. Faleev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 79 KB

english, 1998

27

Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C

N. A. Bert, A. A. Suvorova, V. V. Chaldyshev, Yu. G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, R. Werner

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 452 KB

english, 1998

28

Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters

P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 293 KB

english, 1998

29

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret’yakov, P. Werner

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 738 KB

english, 1998

30

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy

M. D. Vilisova, I. V. Ivonin, L. G. Lavrentieva, S. V. Subach, M. P. Yakubenya, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, Yu. G. Musikhin, V. V. Chaldyshev

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 540 KB

english, 1999

31

Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

A. E. Kunitsyn, V. V. Chaldyshev, S. P. Vul’, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 56 KB

english, 1999

32

Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters

P. N. Brunkov, V. V. Chaldyshev, A. V. Chernigovskii, A. A. Suvorova, N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 172 KB

english, 2000

33

Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs

V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 60 KB

english, 2002

34

Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. E. Toropov, V. V. Chaldyshev

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 67 KB

english, 2002

35

Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, S. E. Toropov

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 80 KB

english, 2003

36

Capacitance study of electron traps in low-temperature-grown GaAs

P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 102 KB

english, 2004

37

A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide

P. N. Brunkov, A. A. Gutkin, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 71 KB

english, 2005

38

Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters

P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 59 KB

english, 2005

39

A new technique to measure the phase characteristics of laser mirrors based on semiconductor heterostructures

A. A. Kovalyov, O. P. Pchelyakov, V. V. Preobrazhenskii, M. A. Putyato, N. N. Rubtsova

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 164 KB

english, 2007

40

Coherent control of transient optical phenomena: Molecules, atoms, and nanostructures

N. N. Rubtsova, A. A. Kovalyov, M. A. Putyato, V. V. Preobrazhenskii, O. P. Pchelyakov, V. A. Reshetov, T. S. Shamirzaev

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 250 KB

english, 2007

41

Self-mode-locking of the Nd3+:KGd(WO4)2laser using a multifunctional semiconductor mirror

N. N. Rubtsova, N. V. Kuleshov, V. E. Kisel’, A. A. Kovalev, S. V. Kuril’chik, V. V. Preobrazhenskii, M. A. Putyato, O. P. Pchelyakov, T. S. Shamirzaev

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 176 KB

english, 2009

42

Semiconductor nanostructures modified by the UV laser radiation

N. N. Rubtsova, N. V. Kuleshov, V. E. Kisel, S. A. Kochubei, A. A. Kovalyov, S. V. Kurilchik, V. V. Preobrazhenskii, M. A. Putyato, O. P. Pchelyakov, T. S. Shamirzaev

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 198 KB

english, 2010

43

Yb3+:KY(WO4)2laser with a fast saturable absorber

A. A. Kovalyov, N. V. Kuleshov, V. E. Kisel’, S. V. Kuril’chik, V. V. Preobrazhenskii, M. A. Putyato, O. P. Pchelyakov, N. N. Rubtsova, B. R. Semyagin

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 166 KB

english, 2011

44

Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature

A. V. Boĭtsov, N. A. Bert, Yu. G. Musikhin, V. V. Chaldyshev, M. A. Yagovkina, V. V. Preobrazhenskiĭ, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 217 KB

english, 2006

45

As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus

A. V. Boitsov, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 208 KB

english, 2009

46

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus

V. V. Chaldyshev, M. A. Yagovkina, M. V. Baidakova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 265 KB

english, 2009

47

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

N. A. Bert, A. L. Kolesnikova, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, A. E. Romanov, V. M. Seleznev, B. R. Semyagin, V. V. Chaldyshev

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 649 KB

english, 2009

48

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 256 KB

english, 2009

49

Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface

Yu. B. Bolkhovityanov, A. P. Vasilenko, A. K. Gutakovskii, A. S. Deryabin, M. A. Putyato, L. V. Sokolov

Journal:

Physics of the Solid State

Année:

2011

Langue:

english

Fichier:

PDF, 870 KB

english, 2011

50

Reflectivity kinetics in the vicinity of exciton transitions in semiconductor nanostructures

N. N. Rubtsova, O. V. Buganov, A. A. Kovalyov, M. A. Putyato, V. V. Preobrazhenskii, O. P. Pchelyakov, S. A. Tikhomirov, T. S. Shamirzaev

Journal:

Bulletin of the Russian Academy of Sciences: Physics

Année:

2008

Langue:

english

Fichier:

PDF, 159 KB

english, 2008